Method and system for carbon doping control in gallium nitride based devices

ABSTRACT

A method of growing an n-type III-nitride-based epitaxial layer includes providing a substrate in an epitaxial growth reactor, forming a masking material coupled to a portion of a surface of the substrate, and flowing a first gas into the epitaxial growth reactor. The first gas includes a group III element and carbon. The method further comprises flowing a second gas into the epitaxial growth reactor. The second gas includes a group V element, and a molar ratio of the group V element to the group III element is at least 5,000. The method also includes growing the n-type III-nitride-based epitaxial layer.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/307,108, filed on Nov. 30, 2011, now U.S. Pat. No. 8,569,153, thedisclosure of which is hereby incorporated by reference in its entiretyfor all purposes.

BACKGROUND OF THE INVENTION

Power electronics are widely used in a variety of applications. Powerelectronic devices are commonly used in circuits to modify the form ofelectrical energy, for example, from AC to DC, from one voltage level toanother, or in some other way. Such devices can operate over a widerange of power levels, from milliwatts in mobile devices to hundreds ofmegawatts in a high voltage power transmission system. Despite theprogress made in power electronics, there is a need in the art forimproved electronics systems and methods of operating the same.

SUMMARY OF THE INVENTION

The present invention relates generally to electronic devices. Morespecifically, the present invention relates to methods and systems forcontrolling the density of carbon in gallium nitride (GaN) semiconductordevices. Merely by way of example, the invention has been applied tomethods and systems for controlling carbon density in high voltage GaNdevices with vertical drift regions. The methods and techniques can beapplied to a variety of compound semiconductor systems includingtransistors, diodes, thyristors, and the like.

Embodiments of the present invention reduce background carbonincorporation in epitaxial films, enabling the epitaxial growth of thickvertical drift layers characterized by low dopant concentrations andhigh breakdown voltages. As described below, the ability to reduce thebackground level of carbon concentration enables increased precision inthe control of dopant concentration at low concentration levels, whichenables high levels of device performance.

According to an embodiment of the present invention, a method of growingan n-type III-nitride-based epitaxial layer is provided. The methodincludes providing a substrate in an epitaxial growth reactor, forming amasking material coupled to a portion of a surface of the substrate, andflowing a first gas into the epitaxial growth reactor. The first gasincludes a group III element and carbon. The method further comprisesflowing a second gas into the epitaxial growth reactor. The second gasincludes a group V element, and a molar ratio of the group V element tothe group III element is at least 5,000. The method also includesgrowing the n-type III-nitride-based epitaxial layer.

According to another embodiment of the present invention, a method ofmanufacturing a vertical JFET is provided. The method includes providingan n-type GaN-based substrate having a surface and a first electricalcontact opposing the surface, forming an epitaxial n-type drift layercoupled to at least a portion of the n-type GaN-based substrate andoperable to conduct current in a direction substantially orthogonal tothe surface, and forming a masking material coupled to a portion of theepitaxial n-type drift layer. The method further includes forming ann-type channel structure coupled to the epitaxial n-type drift layer.Gases including a group V element and a group III element used informing the n-type channel structure are adjusted such that a molarratio of the group V element to the group III element is at least 5,000.The method also includes forming an n-type contact layer coupled to then-type channel structure and substantially parallel to the surface,forming a second electrical contact electrically coupled to the n-typecontact layer, forming a p-type gate region electrically coupled to then-type channel structure, forming a third electrical contactelectrically coupled to the p-type gate region.

According to yet another embodiment of the present invention, a methodof growing an n-type GaN-based epitaxial layer is provided. The methodincludes placing a GaN-based substrate in an MOCVD reactor, forming anoxide coupled to a portion of a surface of the GaN-based substrate, andflowing a gas containing gallium and carbon into the MOCVD reactor. Themethod further includes flowing a gas containing nitrogen into the MOCVDreactor. A molar ratio of nitrogen to gallium is at least 5,000.Finally, the method includes growing the n-type GaN-based epitaxiallayer.

Numerous benefits are achieved by way of the present invention overconventional techniques. For example, embodiments of the presentinvention provide vertical device geometries that conserve valuablewafer area, since the portion of the device that supports high voltages(e.g., the drift region of a transistor or diode), is based on thevertical thickness of an epitaxially grown layer, not by the horizontalextent of the device. Embodiments of the present invention providehomoepitaxial GaN layers on bulk GaN substrates that are imbued withsuperior properties to other materials used for power electronicdevices. High electron mobility, μ, is associated with a given dopinglevel, N, which results in low resistivity, ρ, since ρ=1/qμN, and lowon-state resistance.

Another beneficial property provided by embodiments of the presentinvention is a high critical electric field, E_(crit), for avalanchebreakdown. A high critical electric field allows large voltages to besupported over a smaller length, L, than a material with lesserE_(crit). A shorter distance for current to flow and a low resistivitygive rise to a lower resistance, R, than conventional high voltagedevices since R=ρ L/A, where A is the cross-sectional area of thechannel, or current path. For a high voltage device with the driftregion oriented vertically, more unit cells can be packed into an areaof the wafer than a lateral device of the same voltage rating. More unitcells lead to increased width of the current path, and thus largercross-sectional area, which reduces resistance in the channel. Inaddition, GaN layers grown on bulk GaN substrates have low defectdensity compared to layers grown on mismatched substrates. The lowdefect density results in superior thermal conductivity, less traprelated effects such as dynamic on-resistance, lower leakage currents,and increased reliability.

The ability to obtain regions that can support high voltage with lowresistance compared to similar device structures in other materialsallows embodiments of the present invention to provide resistanceproperties and voltage capability of conventional devices, while usingsignificantly less area for the GaN device. Capacitance, C, scales witharea, approximated as C=εA/t, so the smaller device will have lessterminal-to-terminal capacitance. Lower capacitance leads to fasterswitching and less switching power loss.

As described below, the ability to create a vertical device in GaN grownon bulk GaN substrates enables a smaller active area device with thesame voltage handling capability and same on-state resistance as alarger device in conventional material systems. Conversely, a device ofthe same size will possess lower on-state resistance with the samevoltage blocking capability and capacitance.

These and other embodiments of the invention along with many of itsadvantages and features are described in more detail in conjunction withthe text below and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a simplified cross-sectional diagram illustrating theformation of a GaN epitaxial layer on a substrate through a uniformepitaxial growth process;

FIG. 1B is a simplified cross-sectional diagram illustrating theformation of a GaN epitaxial layer on a substrate through a selectiveepitaxial growth process;

FIG. 2 is a graph that illustrates carbon concentration as a function ofV/III ratio for an exemplary n-type GaN epitaxial growth processaccording to an embodiment of the present invention;

FIG. 3 is a simplified flowchart illustrating a method of fabricating ann-type GaN-based epitaxial layer with reduced carbon concentrationaccording to an embodiment of the present invention;

FIG. 4 is a simplified schematic cross-section of a Schottky barrierdiode (SBD), according to an embodiment of the present invention; and

FIG. 5 is a simplified schematic cross-section of a GaN-based verticaljunction field-effect transistor (JFET) with a regrown channel regionaccording to an embodiment of the present invention.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel that distinguishes among the similar components. If only the firstreference label is used in the specification, the description isapplicable to any one of the similar components having the same firstreference label irrespective of the second reference label.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

Embodiments of the present invention relate to electronic devices. Morespecifically, the present invention relates to methods and systems forcontrolling background carbon density in semiconductor devices. Merelyby way of example, the invention has been applied to methods and systemsfor controlling doping in high voltage GaN devices with vertical driftregions. The methods and techniques can be applied to a variety ofcompound semiconductor systems including transistors, diodes,thyristors, and the like.

As described more fully throughout the present specification, thefabrication of GaN epitaxial layer(s) on GaN-based substrates, includingpseudo-bulk GaN substrates, enables vertical device concepts in the GaNmaterial system according to embodiments of the present invention.Devices operated in high voltage regimes, typically referred to as highvoltage devices, are provided with doping control for the drift regionaccording to embodiments of the present invention such that relativelylow volumetric levels of dopants are achieved. Since the maximumelectric field is a function of the doping profile, embodimentsdescribed herein are able to operate at higher voltages thanconventional devices. Embodiments utilize low-strain films that aregrown on native substrates and are therefore characterized by reduced orzero lattice mismatch. Such layers can be grown to thicknesses notgenerally available using conventional techniques, enabling high poweroperation in vertical configurations. As described herein, GaN materialproperties enable thinner drift regions for a given voltage rating andare characterized by a high carrier mobility compared to othermaterials.

Although some embodiments are discussed in terms of GaN substrates andGaN epitaxial layers, the present invention is not limited to theseparticular binary III-V materials and may be applicable to a broaderclass of III-V materials, in particular III-nitride materials. Thus,although some examples relate to the growth of n-type GaN epitaxiallayer(s) doped with silicon, in other embodiments the techniquesdescribed herein are applicable to the growth of highly or lightly dopedmaterial, p-type material, material doped with dopants in addition to orother than silicon such as Mg, Ca, Be, Ge, Se, S, O, Te, Sn, and thelike. Additionally, other III-nitride materials in addition to GaN areincluded within the scope of the present invention, including, but notlimited to, other binary III-nitride materials, ternary III-nitridematerials, such as InGaN and AlGaN, quaternary III-nitride materials,such as AlInGaN, doped versions of these materials, and the like. Thesubstrates discussed herein can include a single material system ormultiple material systems including composite structures of multiplelayers. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives.

Applications that can utilize the vertical drift regions describedherein are many, with commercial markets including high voltage switchedmode power supplies, power factor correction devices, DC-AC inverters,DC-DC boost converters, various other circuit topologies, and the like.The inventors have determined that devices fabricated utilizing themethods and systems described herein for reducing background carbondensity have the potential to provide benefits and performance notavailable using conventional solutions, including solutions based onsilicon carbide (SiC) technology. Because conventional GaN-baseddevices, such as lasers, light-emitting diodes (LEDs), and evenmetal-oxide-semiconductor field-effect transistors (MOSFETs), do notutilize the relatively lightly-doped drift regions described herein,background carbon density has typically been ignored.

High quality GaN grown on native substrates can be characterized by alow defect density (<10⁶ cm⁻³) and a related high electron mobility,resulting in low forward conduction loss. Due to the high criticalelectric field of GaN, drift regions may be kept relatively thin, whileblocking high voltages, which will also allow low forward conductionloss. For a given doping level, the drift layer thickness is preferablylarge enough to accommodate the full depletion width at the breakdownvoltage (V_(BR)). According to some embodiments, the drift region islightly doped (e.g., on the order of 1×10¹⁴ to 1×10¹⁸ cm⁻³) and thethickness of the drift region measured along the direction of currentflow is reduced to minimize unnecessary series resistance.

Embodiments of the present invention provide methods and systems thatrelate to basic building blocks useful in vertical, high voltage devicesfabricated using GaN-based material systems. These building blocksinclude, but are not limited to, layer thicknesses, concentrations ofdonor and/or acceptor dopants, and the like. Merely by way of example,the doping concentration and thickness of a drift layer in a verticaltransistor or other device employing a drift region are controlled usingthe embodiments described herein.

The inventors have determined that designs for vertical drift layers,which can range in thickness from one or several microns to over onehundred microns, and associated drift regions, can benefit from precisecontrol over the concentration of dopants (i.e. doping concentration) inthese vertical drift layers, particularly in high voltage applications.For example, Table 1 lists doping concentrations and depletion widths ofthe drift region for breakdown voltages from 600 V to 13.6 kV.

TABLE 1 Doping Concentration V_(BR) (V) (cm⁻³) t_(drift) (μm) 6004.75E+16 3.7 1200 2.38E+16 7.3 1800 1.59E+16 10.9 2400 1.19E+16 14.63200 8.94E+15 19.4 4000 7.16E+15 24.2 4800 5.96E+15 29.1 5600 5.10E+1534.0 6400 4.47E+15 38.8 7200 3.97E+15 43.7 8000 3.58E+15 48.5 88003.25E+15 53.4 9600 2.92E+15 59.4 10400 2.75E+15 63.1 11200 2.56E+15 67.912000 2.38E+15 72.8 12800 2.24E+15 77.6 13600 2.10E+15 82.5

FIGS. 1A and 1B are simplified cross-sectional diagrams illustratingembodiments of the formation of a GaN epitaxial layer on a substrate 100through respective uniform and selective growth processes. It will beunderstood that FIGS. 1A and 1B are for illustrative purposes only, andare not intended to reflect all processes involved in how precursorgasses decompose and react to form the resultant epitaxial layer.

The most common epitaxial growth methods are metal organic chemicalvapor deposition (MOCVD), metal organic vapor phase epitaxy, and metalorganic molecular beam epitaxy. During the epitaxy process, metalorganicprecursors are utilized to provide the Group III elements incorporatedinto the III-nitride epitaxial structure. For example, carbon producedfrom the metalorganic precursors, for example, trimethyl gallium,triethyl gallium, trimethyl aluminum, triethyl aluminum, or the like,can be unintentionally incorporated into a GaN-based crystal lattice.When carbon is incorporated into the GaN-based drift layer during thedrift layer epitaxial process, the carbon incorporation can causeacceptor-like background doping levels of, for example, between1×10^(16 cm) ⁻³ and 1×10¹⁸ cm⁻³, particularly 3×10¹⁶ cm⁻³. This isparticularly troublesome to n-type drift layers, where doping control isimportant in realizing high voltage operation. The unintended backgrounddoping can compensate intentional n-type doping (e.g., silicon doping)introduced during drift layer epitaxial growth, making it difficult toachieve the n-type dopant concentrations shown in Table 1.

In a uniform epitaxial growth process, such as that shown in FIG. 1A,the growth species 120 interacts with the surface 110 to cause epitaxialgrowth on an entire surface 110 of a substrate 100. As stated above,carbon included in a metalorganic Group III precursor is incorporatedinto the resultant epitaxial layer. However, embodiments of the presentinvention reduce carbon levels in the resultant epitaxial layer, forexample, using chemical reactions between the carbon and ambientelements and/or molecules in the growth chamber. Atomic hydrogen fromthe Group V precursor (e.g., ammonia), for example, can react with thecarbon in the resultant epitaxial layer and surface species to formmethane, which can be removed from the growth chamber. By increasing theV/III ratio, that is, the molar ratio of the Group V element precursor(e.g., ammonia (NH₃)) to the Group III element precursor more atomichydrogen can be formed. This results in lower carbon levels in theresultant epitaxial layer. However, increasing the V/III ratio in auniform epitaxial growth process to a degree that would result insignificantly lower carbon levels would typically require reducing theGroup III precursor flow, and thus can cause the growth process to beprohibitively slow and inefficient.

In a selective epitaxial growth process, such as that shown in FIG. 1B,masks 130 are used such that the growth species 120 causes epitaxialgrowth only on exposed surface 115 of the substrate 100. The masks 130,which can be made of refractory oxides or other materials that inhibitnucleation, for example SiO or SiON, not only prevent growth of theresultant epitaxial layer on areas of the substrate 130 to which themasks 130 are coupled, but also increase the growth rate of theepitaxial layer on the exposed surface 115. As illustrated in FIG. 1B,through processes such as surface migration, evaporation, and/or vapordiffusion, the growth species 120 migrate to unmasked areas and form anepitaxial layer on the exposed surface 115 much more quickly thancorresponding uniform epitaxial growth processes, such as that shown inFIG. 1A. Although the speed of the selective epitaxial growth processcan vary depending on various factors, such as the amount of area of thesubstrate 100 covered by the masks 130, growth rates of the resultantepitaxial layer in selective epitaxial growth processes can be muchfaster than growth rates in corresponding uniform epitaxial growthprocesses. In some embodiments, the growth rate is at least 2 timesfaster, and rates of 10 times faster or more can be achieved.

Embodiments of the present invention take advantage of this phenomenonto reduce carbon incorporation in n-type epitaxial layers, enabling lown-type doping for high breakdown voltage devices. According toembodiments of the present invention, masks 130 are used to cover allareas of the substrate 100 except those on which an epitaxial layer withlow carbon doping is to be formed. Additionally, the flow of precursorgases can be adjusted such that the V/III ratio is increasedsubstantially. The slowdown in the growth rate due to the increasedV/III ratio is offset by the increased growth rate due to the selectiveepitaxial growth process. Thus, the corresponding growth rate of theresultant n-type epitaxial layer is similar to the growth rate of auniform epitaxial growth process. In some embodiments, for example, thegrowth rate is between 1 and 2 μm/hr. The resultant n-type epitaxiallayer, however, can have much less carbon than one made fromconventional epitaxial processes. Moreover, carbon reduction mayadditionally be promoted due to growth species such as ammonia andtrimethylgallium being better pyrolyzed or thermally activated due totheir greater residence time in the thermal boundary layer.

FIG. 2 is a graph 200 that illustrates the carbon concentration as afunction of V/III ratio for an example n-type GaN epitaxial growthprocess. Conventional epitaxial growth processes utilized V/III ratiosof typically 2,500 or less, resulting in carbon concentrations in theresultant n-type epitaxial layer around 1×10¹⁷ cm⁻³. Embodiments of thepresent invention, however can utilize V/III ratios of at least 5,000.Specific V/III ratios can include 5,000; 10,000; 15,000; 20,000; 25,000;or greater. As shown in the graph 200, carbon concentrations in theresultant n-type epitaxial layers at these V/III ratios can beapproximately 2×10¹⁶ cm-³, 1×10¹⁶ cm-³, or less.

FIG. 3 is a simplified flowchart illustrating a method of fabricating ann-type GaN-based epitaxial layer with reduced carbon concentrationaccording to an embodiment of the present invention. The method includesplacing a GaN-based substrate in an MOCVD reactor (310). The GaN-basedsubstrate can be a doped n-type GaN substrate or other suitablesubstrate including one or more existing epitaxial layers.

The method also includes forming an oxide coupled to a portion of asurface of the GaN-based substrate (312). Depending on the type ofGaN-based semiconductor device to be formed (e.g., Schottky barrierdiode, vertical JFET, etc.), some or all of the oxide may compriseportions of the device itself. Alternatively, the oxide may be used onlyas a mask during the subsequent selective epitaxial growth process andremoved after the process is complete. As stated elsewhere herein, therelative amount of surface area of the substrate covered by the oxidecan impact the growth rate of the selective epitaxial growth process.

The method further includes flowing a gas containing gallium and carbon(314), and a gas containing nitrogen (316) into the MOCVD reactor, suchthat the molar ratio of nitrogen to gallium (i.e., the V/III ratio) isat least 5,000 (318). Under these conditions, the resultant n-typeGaN-based epitaxial layer that is grown (320) will have a relatively lowcarbon content. As an example, depending on the V/III ratio utilized,the resultant n-type GaN epitaxial layer can have a carbon concentrationbetween from about 1×10¹⁵ cm⁻³ to about 2×10¹⁶ cm⁻³. As illustrated bythe graph 200 of FIG. 2, lower carbon concentrations can be achievedwith higher V/III ratios.

A variety of gases can be utilized during the growth process, includinga gas containing nitrogen that includes at least one of ammonia orcracked ammonia, and a gas containing gallium that includes at least oneof tri-methyl gallium (TMG), tri-ethyl gallium (TEG), cracked tri-methylgallium, or cracked tri-ethyl gallium.

It should be appreciated that the specific steps illustrated in FIG. 3provide a particular method of fabricating an n-type GaN epitaxial layeraccording to an embodiment of the present invention. Other sequences ofsteps may also be performed according to alternative embodiments. Forexample, alternative embodiments of the present invention may performthe steps outlined above in a different order. Moreover, the individualsteps illustrated in FIG. 3 may include multiple sub-steps that may beperformed in various sequences as appropriate to the individual step.Furthermore, additional steps may be added or removed depending on theparticular applications. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

In some embodiments, a precursor that replaces some or all of thecarbon-bearing groups with non-carbon-bearing groups, such as galliumchloride or diethyl gallium chloride, is used in addition to a typicalgallium precursor such as TMG in a process utilizing organic precursors,such as MOCVD. In some embodiments, low doped n-type GaN-based layersare grown with a gallium precursor that is 100% gallium chloride ordiethyl gallium chloride, or a mixture of gallium chloride or diethylgallium chloride and one or both of TEG and TMG. Low doped n-typeGaN-based layers grown with gallium chloride or diethyl gallium chlorideas all or part of the gallium precursor may have a carbon concentrationless than 10¹⁷ cm⁻³ in some embodiments, less than 10¹⁶ cm⁻³ in someembodiments, or less than 10¹⁵ cm^(—3) in some embodiments of theinvention.

Various methods for reducing carbon incorporation in III-nitridematerial may be combined. For example, in some embodiments, GaN is grownusing both a precursor that results in less carbon present duringgrowth, such as TEG, gallium chloride, or diethyl gallium chloride, anda material that inhibits carbon from incorporating in the III-nitridecrystal, such as an indium-containing gas. The use of materials thatinhibit carbon incorporation during epitaxial growth is discussed inmore detail in commonly-assigned U.S. patent application Ser. No.13/198,661, filed on Aug. 4, 2011, the disclosure of which is herebyincorporated by reference in its entirety.

FIG. 4 is a simplified schematic cross-section of a Schottky barrierdiode (SBD) 400 according to an embodiment of the present invention. TheSBD 400 is referred to as a vertical device because the current flowthrough the SBD 400 is in a vertical direction that is substantiallyorthogonal to the growth direction of the various epitaxial layersincluded in the device.

The SBD 400 includes a III-nitride substrate 450 illustrated as a n+ GaNsubstrate. An additional epitaxial layer 440, such as an n+ GaN layer,can be coupled to the III-nitride substrate 450. A low-doped III-nitrideepitaxial layer 470, such as an n− GaN epitaxial layer, can be coupledto the additional epitaxial layer 440.

Silicon dioxide structures 430 (or other dielectric structures) can becoupled to the low-doped III-nitride epitaxial layer 470 and serve as amask for epitaxial growth of a low-doped drift region structure 420. Insome embodiments, however, the a low-doped III-nitride epitaxial layer470 may be omitted, in which case the silicon dioxide structures can becoupled to the additional epitaxial layer 440. The thickness of thesilicon dioxide structures 430 can be adjusted, according to desiredfunctionality, manufacturing concerns, and other such factors. Broadlyspeaking, a minimum thickness may be governed by a minimum thicknessrequired to form a continuous mask for epitaxial growth. A maximumthickness may be governed by stress and/or other issues associated withlarger thicknesses. While some embodiments include thicknesses ofbetween 100 and 200 nm, other embodiments include thicknesses of aslittle as 5 nm or less, or as large as 1 μm or more.

The drift region structure 420, together with the low-doped III-nitrideepitaxial layer 470, forms the drift region of the SBD 400. The driftregion structure 420 can be formed in a selective epitaxial growthprocess as described herein. The resulting low carbon levels allow forlow overall n-type doping of the drift region structure 420, whichenables high-voltage operation of the SBD 400. For high power operation,the combined thickness of the low-doped III-nitride epitaxial layer 470can be relatively thick in order to support a large breakdown voltagedrift region structure 420. In typical embodiments, the combinedthickness can be between about 1 μm to about 100 μm and the dopingconcentration can be between about 1×10¹⁴ cm⁻³ to about 1×10¹⁷ cm⁻³.Lower doping enables high voltage operation.

An ohmic contact 460 is electrically coupled to the III-nitridesubstrate 450. The ohmic contact 460 can be one or more layers of ohmicmetal that serve as an electrical contact for the cathode of the SBD400. For example, the ohmic contact 460 can comprise a titanium-aluminum(Ti/Al) ohmic metal. Other metals and/or alloys can be used including,but not limited to, aluminum, nickel, gold, combinations thereof, or thelike. In some embodiments, an outermost metal of the ohmic contact 460can include gold, tantalum, tungsten, palladium, silver, or aluminum,combinations thereof, and the like. The ohmic contact 460 can be formedusing any of a variety of methods such as sputtering, evaporation, orthe like.

The SBD 400 illustrated in FIG. 4 further includes a Schottky contact410 electrically coupled to the drift region structure 420. In someembodiments, a surface of the drift region structure 420 to which theSchottky contact 410 is coupled can be treated to place it in acondition suitable to create a Schottky barrier. The Schottky contact410 comprises one or more Schottky metals that are deposited andpatterned to form the Schottky contact 410. Examples of Schottky metalsinclude nickel, palladium, platinum, combinations thereof, or the like.The geometry of the various components of the SBD 400 can vary dependingon desired functionality. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

FIG. 5 is a simplified schematic cross-section of a GaN-based verticaljunction field-effect transistor (JFET) 500 with a GaN channel region580, according to an embodiment of the present invention. Like the SBD400 of FIG. 4, the vertical JFET 500 is a vertical device, with currentflow through the vertical JFET 500 in a vertical direction that issubstantially orthogonal to the growth direction of the variousepitaxial layers included in the device.

A first GaN epitaxial layer 520 is formed on a GaN substrate 510,creating a drift region for the vertical JFET 500. The first GaNepitaxial layer 520 can have, for example, relatively low n-type doping,and may be formed using the selective epitaxial growth processesdescribed herein. The GaN substrate 510 can be a GaN bulk or pseudo-bulksubstrate with higher dopant concentration than the first GaN epitaxiallayer 520, with the same electrical conductivity type. In typicalembodiments, the thickness of first GaN epitaxial layer 520 can bebetween about 1 μm to about 100 μm and the doping concentration can bebetween about 1×10¹⁴ cm⁻³ to about 1×10¹⁷ cm⁻³. In other embodiments,the thickness and doping concentration are modified as appropriate tothe particular application. Additional description related tothicknesses, dopant concentrations, and breakdown voltages of the driftlayer are provided in U.S. patent application Ser. No. 13/198,655, filedon Aug. 4, 2011, the disclosure of which is hereby incorporated byreference in its entirety.

A second GaN epitaxial layer 530 can be formed above the first GaNepitaxial layer 520. The second GaN epitaxial layer 530, which cancomprise the gate of the vertical JFET 500, can be a highly-dopedepitaxial layer of a different conductivity type from the first GaNepitaxial layer 520. In an n-channel vertical JFET, for example, thesecond GaN epitaxial layer 530 can comprise a p+ GaN epitaxial layer,and the first GaN epitaxial layer 520 can include an n− GaN epitaxiallayer.

The thickness of the second GaN epitaxial layer 530 can vary, dependingon the process used to form the layer and the device design. In someembodiments, the thickness of the second

GaN epitaxial layer 530 is between 0.1 μm and 5 μm. In otherembodiments, the thickness of the second GaN epitaxial layer 530 isbetween 0.3 μm and 1 μm

The second GaN epitaxial layer 530 can be highly doped, for example in arange from about 5×10¹⁷ cm⁻³ to about 1×10¹⁹ cm⁻³. Additionally, as withother epitaxial layers, the dopant concentration of the second GaNepitaxial layer 530 can be uniform or non-uniform as a function ofthickness. In one embodiment, a non-uniform dopant concentrations canprovide higher dopant concentrations at the top of the second GaNepitaxial layer 530 where metal contacts subsequently can be formed.

At least a portion of the second GaN epitaxial layer 530 can be removedto provide an opening to the first GaN epitaxial layer 520 in which thea GaN channel region 580 can be formed. The removal can be configured tostop at the surface of the first GaN epitaxial layer 520, althoughremoval, such as etching, may penetrate a portion of the first GaNepitaxial layer 520. ICP etching and/or other appropriate GaN etchingprocesses can be used. Additionally, some or all of the masks used in anetching process may be subsequently used as masks in the selectiveepitaxial growth of the GaN channel region 580.

Dimensions of the removed portion(s) of the second GaN epitaxial layer530 define the channel width 585 of the vertical JFET 500. The channelwidth 585 of the vertical JFET 500 can vary, depending on variousfactors such as desired functionality of the vertical JFET 500, dopantconcentrations of the channel region, and the like. For example, anormally-off vertical JFET can have a channel width of less than 3 μm,less than 5 μm, or less than 10 μm, with some embodiments having achannel width between 0.5 μm and 3 μm. For a normally-on JFET, thechannel width can be greater.

The GaN channel region 580 can be formed by using the selectiveepitaxial growth processes described herein on the exposed surface ofthe first GaN epitaxial layer 520. Because the regrowth process caninclude lateral growth, the GaN channel region 580 can extend over atleast a portion of one or more upper surface(s) of the second GaNepitaxial layer 530 if the thickness of the GaN channel region 580exceeds the thickness of the second GaN epitaxial layer 530 and themasks used in the selective epitaxial growth process allow. Such lateralgrowth can be acceptable in many vertical JFET applications.

A GaN epitaxial structure 550 can be formed above the GaN channel region580. The GaN epitaxial structure 550, which eventually can comprise thesource of the vertical JFET 500, can be a highly doped epitaxial layerof the same conductivity type as the first GaN epitaxial layer 520 andthe GaN channel region 580. In general, the dopant concentration of theGaN epitaxial structure 550 can exceed the dopant concentrations of thefirst GaN epitaxial layer and GaN channel region 580. For example, ann-type dopant concentration of the GaN epitaxial structure 550 can beequal to or greater than 1×10¹⁸ cm⁻³.

The thickness of the GaN epitaxial structure 550 can impact the contactresistance and current flow properties of the vertical JFET 500. In someembodiments, thicknesses can be between 500 Å and 5 μm, for example 2μm. In other embodiments, the thickness of the third GaN epitaxial layer550 can be 0.5 μm, or between 0.3 μm and 0.7 μm.

A metallic structure 540 can be coupled with the GaN substrate 510. Themetallic structure 540 can be one or more layers of ohmic metal thatserve as a gate contact of the vertical JFET 500. For example, themetallic structure 540 can comprise a titanium-aluminum (Ti/Al ) ohmicmetal. Other metals and/or alloys can be used including, but not limitedto, aluminum, nickel, gold, combinations thereof, or the like. In someembodiments, an outermost metal of the metallic structure 540 caninclude gold, tantalum, tungsten, palladium, silver, or aluminum,combinations thereof, and the like. The metallic structure 540 can beformed using any of a variety of methods such as sputtering,evaporation, or the like.

Additional metallic structures 560 may be coupled to the second GaNepitaxial layer 530. The additional metallic structures 560 serve asgate contacts for the vertical JFET 500 and can be one or more layers ofohmic metal including metals and/or alloys similar to the metallicstructure 540. The additional metallic structures 560 can be formedusing a variety of techniques, including lift-off and/or deposition withsubsequent etching, which can vary depending on the metals used. Examplemetals include nickel-gold (Ni/Au), Pd, Pt, and the like.

Finally, further metallic structures 570, 590 can be coupled to theadditional metallic structures 560 and the GaN epitaxial structure 550,respectively, as illustrated. These further metallic structures 570, 590can be formed using the same techniques used to form the additionalmetallic structures 560, and also can comprise similar metals and/oralloys. Because additional metallic structures 560 can sufficiently formcontacts to the second GaN epitaxial layer 530, the additional metallicstructures 570 can be omitted, if desired. The further metallicstructure 590 formed on the GaN epitaxial structure 550 can serve as asource contact for the vertical JFET 500.

The techniques for controlling the density of carbon in GaNsemiconductor devices provided by embodiments of the present inventionwill enable the fabrication of epitaxial layers such as the GaN channelregion 580 with improved electrical performance in comparison withconventional techniques. In addition to the illustrated SBD 400 andvertical JFET 500, other embodiments can be used to fabricate epitaxiallayers used in P-i-N diodes, merged P-i-N Schottky (MPS) diodes,thyristors, and a number of other transistor and diode variations. Oneof ordinary skill in the art would recognize many variations,modifications, and alternatives.

Although embodiments of the present invention have been discussed in thecontext of doping control of drift regions that are vertically definedby epitaxial growth to produce a drift region with a finely controlledlow doping level, embodiments of the present invention are not limitedto this particular geometry. In another possible configuration, thedrift region is laterally defined by device fabrication, for example bygate to drain spacing in a field effect transistor. In another examplethe drift region includes the substrate, which is appropriately doped.One of ordinary skill in the art would recognize many variations,modifications, and alternatives.

Moreover, although some embodiments of the present invention areillustrated in terms of a vertical FET, embodiments of the presentinvention are not limited to this particular device design and themethods and systems described herein are applicable to a wide variety ofelectrical devices and particularly devices utilizing vertical currentflow. For example, epitaxial layers with controllable levels of dopantincorporation are applicable to other vertical or lateral devicesutilizing drift layers, semiconductor resistors, isolation regions, orthe like. These devices include Schottky diodes and devices integratingthe various transistor and diodes described herein.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

What is claimed is:
 1. A method of growing an n-type III-nitride-basedepitaxial layer for a drift layer of a diode, the method comprising:providing a substrate in an epitaxial growth reactor; flowing a firstgas into the epitaxial growth reactor, wherein the first gas includes agroup III element and carbon; and flowing a second gas into theepitaxial growth reactor, wherein: the second gas includes a group Velement; and a molar ratio of the group V element to the group IIIelement is at least 5,000; and growing the n-type III-nitride-basedepitaxial layer to form the drift layer of the diode.
 2. The method ofclaim 1 wherein the first gas comprises at least one of tri-methylgallium or tri-ethyl gallium.
 3. The method of claim 1 wherein thesecond gas comprises ammonia.
 4. The method of claim 1 wherein growingthe n-type III-nitride-based epitaxial layer comprises a metal-organicchemical vapor deposition process.
 5. The method of claim 1 wherein then-type III-nitride-based epitaxial layer has a carbon concentration lessthan 1×10¹⁶ cm⁻³.
 6. The method of claim 1 wherein a growth rate of then-type III-nitride-based epitaxial layer is between 1 μm/hr and 2 μm/hr.7. The method of claim 1 wherein a thickness of the drift layer isgreater than 1 μm.
 8. A method of manufacturing a diode, the methodcomprising: providing an n-type GaN-based substrate having a firstsurface and a first electrical contact opposing the first surface;forming an epitaxial n-type drift layer above the first surface, theepitaxial n-type drift layer having a bottom surface and a top surface,wherein: the bottom surface is closer to the first surface than the topsurface; the epitaxial n-type drift layer is configured to conductcurrent; gases used in forming the epitaxial n-type drift layer includea group V element and a group III element; and a molar ratio of thegroup V element to the group III element is at least 5,000; and forminga second electrical contact above the top surface of the epitaxialn-type drift layer.
 9. The method of claim 8 wherein the gas includingthe group V element comprises at least one of ammonia or crackedammonia.
 10. The method of claim 8 wherein the gas including the groupIII element comprises at least one of tri-methyl gallium, tri-ethylgallium, cracked tri-methyl gallium, or cracked tri-ethyl gallium. 11.The method of claim 8 wherein the epitaxial n-type drift layer has acarbon concentration less than 1×10¹⁶ cm⁻³.
 12. The method of claim 8wherein a growth rate of the n-type drift layer is between 1 μm/hr and 2μm/hr.
 13. The method of claim 8 wherein the n-type GaN-based substratecomprises an n-type GaN substrate.
 14. The method of claim 8 wherein thea molar ratio of the group V element to the group III element is atleast 10,000.
 15. The method of claim 8 wherein a thickness of theepitaxial n-type drift layer is greater than 1 μm.